FQD13N06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

4 Weeks

Weight :

260.37mg

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Height :

2.3mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Vgs (Max) :

±25V

Power Dissipation-Max :

2.5W Ta 28W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate to Source Voltage (Vgs) :

25V

Voltage - Rated DC :

60V

Turn-Off Delay Time :

8 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Current Rating :

10A

Rise Time :

25ns

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rds On (Max) @ Id, Vgs :

140m Ω @ 5A, 10V

Avalanche Energy Rating (Eas) :

85 mJ

Series :

QFET®

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Pbfree Code :

yes

FET Type :

N-Channel

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

40A

Number of Terminations :

2

Input Capacitance (Ciss) (Max) @ Vds :

310pF @ 25V

Width :

6.1mm

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Fall Time (Typ) :

15 ns

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Continuous Drain Current (ID) :

10A

Number of Elements :

1

Turn On Delay Time :

5 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

ECCN Code :

EAR99

Case Connection :

DRAIN

Length :

6.6mm

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

JESD-609 Code :

e3

Published :

2001

Power Dissipation :

2.5W

Drain to Source Breakdown Voltage :

60V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)