FQD12P10TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Number of Elements :

1

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

290m Ω @ 4.7A, 10V

Terminal Finish :

MATTE TIN

Pulsed Drain Current-Max (IDM) :

37.6A

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±30V

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

DS Breakdown Voltage-Min :

100V

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Power Dissipation-Max :

2.5W Ta 50W Tc

Transistor Application :

SWITCHING

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pin Count :

3

Drain-source On Resistance-Max :

0.29Ohm

Drain Current-Max (Abs) (ID) :

9.4A

Series :

QFET®

Avalanche Energy Rating (Eas) :

370 mJ

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

FET Type :

P-Channel