FQD12P10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.29Ohm

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

DS Breakdown Voltage-Min :

100V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

370 mJ

Pulsed Drain Current-Max (IDM) :

37.6A

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Number of Terminations :

2

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

9.4A

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

2.5W Ta 50W Tc

Qualification Status :

COMMERCIAL

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

290m Ω @ 4.7A, 10V

FET Type :

P-Channel

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 250µA