FQB6N80TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1500pF @ 25V

Avalanche Energy Rating (Eas) :

680 mJ

Gate Charge (Qg) (Max) @ Vgs :

31nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Pins :

3

Published :

2000

Weight :

1.31247g

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

800V

ECCN Code :

EAR99

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

1.95 Ω @ 2.9A, 10V

Power Dissipation-Max :

3.13W Ta 158W Tc

Mounting Type :

Surface Mount

Reach Compliance Code :

not_compliant

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Drain to Source Breakdown Voltage :

800V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Height :

4.83mm

Transistor Element Material :

SILICON

Length :

10.67mm

Transistor Application :

SWITCHING

Turn On Delay Time :

30 ns

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Element Configuration :

Single

Series :

QFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

5.8A

Current Rating :

5.8A

Contact Plating :

Tin

Case Connection :

DRAIN

Fall Time (Typ) :

45 ns

Resistance :

1.95Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5V @ 250μA

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

5.8A Tc

Threshold Voltage :

5V

JESD-30 Code :

R-PSSO-G2

Pbfree Code :

yes

Rise Time :

70ns

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Factory Lead Time :

4 Weeks

Power Dissipation :

3.13W

Turn-Off Delay Time :

65 ns

Width :

9.65mm

Lead Free :

Lead Free