FQB6N25TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

300pF @ 25V

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Pbfree Code :

yes

Terminal Form :

Gull wing

Pin Count :

3

Number of Elements :

1

Surface Mount :

yes

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

5.5A

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Reach Compliance Code :

Unknown

Operating Temperature :

-55°C~150°C TJ

Avalanche Energy Rating (Eas) :

75 mJ

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

1 Ω @ 2.75A, 10V

Current - Continuous Drain (Id) @ 25°C :

5.5A Tc

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

22A

Power Dissipation-Max :

3.13W Ta 63W Tc

Vgs(th) (Max) @ Id :

5V @ 250μA

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

1Ohm

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

250V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

8.5nC @ 10V

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

250V