FQB6N60TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

FET Type :

N-Channel

Terminal Position :

Single

Power Dissipation-Max :

3.13W Ta 130W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

600V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

5V @ 250μA

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

Pin Count :

3

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

6.2A

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Number of Terminations :

2

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

24.8A

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Series :

QFET®

Input Capacitance (Ciss) (Max) @ Vds :

1pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Current - Continuous Drain (Id) @ 25°C :

6.2A Tc

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

440 mJ

Rds On (Max) @ Id, Vgs :

1.5 Ω @ 3.1A, 10V

Number of Elements :

1