FQB65N06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

QFET®

Drain to Source Voltage (Vdss) :

60V

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

650 mJ

Drain-source On Resistance-Max :

0.016Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

DS Breakdown Voltage-Min :

60V

Rds On (Max) @ Id, Vgs :

16m Ω @ 32.5A, 10V

Packaging :

Tape and Reel (TR)

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

260A

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Number of Terminations :

2

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Pbfree Code :

yes

Drain Current-Max (Abs) (ID) :

65A

Pin Count :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Surface Mount :

yes

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Power Dissipation-Max :

3.75W Ta 150W Tc

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Case Connection :

DRAIN

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

2.41pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs (Max) :

±25V

Terminal Form :

Gull wing