FQB65N06TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

65A

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.016Ohm

Vgs(th) (Max) @ Id :

4V @ 250µA

Mounting Type :

Surface Mount

Vgs (Max) :

±25V

Operating Temperature :

-55°C~175°C TJ

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Finish :

MATTE TIN

Drain to Source Voltage (Vdss) :

60V

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

3.75W Ta 150W Tc

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

QFET®

Reach Compliance Code :

Unknown

Pulsed Drain Current-Max (IDM) :

260A

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Surface Mount :

yes

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

16m Ω @ 32.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

650 mJ

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

2.41pF @ 25V

Pbfree Code :

yes

Qualification Status :

COMMERCIAL