FP35R12W2T4PBPSA1

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Mfr.Part #
FP35R12W2T4PBPSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 70A 20MW
Stock
18
In Stock :
18

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Mounting Type :
Chassis Mount
Transistor Element Material :
SILICON
Input Capacitance (Cies) @ Vce :
2nF @ 25V
Current - Collector Cutoff (Max) :
1mA
NTC Thermistor :
yes
Voltage - Collector Emitter Breakdown (Max) :
1200V
Turn Off Time-Nom (toff) :
510 ns
Power - Max :
20mW
Series :
EasyPIM™ 2B
Transistor Application :
POWER CONTROL
Terminal Position :
UPPER
Turn On Time :
43 ns
RoHS Status :
ROHS3 Compliant
Package / Case :
Module
Case Connection :
Isolated
Surface Mount :
No
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Factory Lead Time :
16 Weeks
Operating Temperature :
-40°C~150°C
IGBT Type :
Trench Field Stop
Published :
2002
Vce(on) (Max) @ Vge, Ic :
2.25V @ 15V, 35A
Terminal Form :
UNSPECIFIED
Current - Collector (Ic) (Max) :
70A
ECCN Code :
EAR99
Input :
Three Phase Bridge Rectifier
Number of Terminations :
23
JESD-30 Code :
R-XUFM-X23
Configuration :
Three Phase Inverter
Number of Elements :
7
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Polarity/Channel Type :
N-Channel
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Datasheets
FP35R12W2T4PBPSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FP35R12W2T4PBPSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Chassis Mount, Package / Case:Module, Operating Temperature:-40°C~150°C, Number of Terminations:23, FP35R12W2T4PBPSA1 pinout, FP35R12W2T4PBPSA1 datasheet PDF, FP35R12W2T4PBPSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FP35R12W2T4PBPSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FP35R12W2T4PBPSA1


FP35R12W2T4PBPSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FP35R12W2T4PBPSA1 Description


FP35R12W2T4PBPSA1 is a single IGBT with a breakdown voltage of 1200V from Infineon Technologies. FP35R12W2T4PBPSA1 operates between -40°C~150°C, and its Current - Collector (Ic) (Max) is 70A. The FP35R12W2T4PBPSA1 has 3 pins and it is available in Module packaging way. FP35R12W2T4PBPSA1 has a 1200V Voltage - Collector Emitter Breakdown (Max) value.



FP35R12W2T4PBPSA1 Features


  • Voltage - Collector Emitter Breakdown (Max): 1200V

  • Input: Three Phase Bridge Rectifier

  • Transistor Application: POWER CONTROL

  • Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A

  • Current - Collector (Ic) (Max): 70A



FP35R12W2T4PBPSA1 Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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