FP35R12KT4BOSA1

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Mfr.Part #
FP35R12KT4BOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 35A 210W
Stock
3
In Stock :
3

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
Current - Collector (Ic) (Max) :
35A
Halogen Free :
Not Halogen Free
Turn On Time :
210 ns
Pbfree Code :
No
RoHS Status :
RoHS Compliant
Voltage - Collector Emitter Breakdown (Max) :
1200V
Current - Collector Cutoff (Max) :
1mA
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Moisture Sensitivity Level (MSL) :
Not Applicable
Vce(on) (Max) @ Vge, Ic :
2.25V @ 15V, 35A
NTC Thermistor :
yes
Terminal Position :
UPPER
Input :
Standard
Configuration :
Three Phase Inverter
Pin Count :
23
Number of Terminations :
23
ECCN Code :
EAR99
Polarity/Channel Type :
N-Channel
Number of Elements :
7
Power - Max :
210W
IGBT Type :
Trench Field Stop
Transistor Element Material :
SILICON
Terminal Form :
UNSPECIFIED
Published :
2002
Qualification Status :
Not Qualified
Case Connection :
Isolated
Surface Mount :
No
Package / Case :
Module
Number of Pins :
23
Factory Lead Time :
12 Weeks
Input Capacitance (Cies) @ Vce :
2nF @ 25V
Mounting Type :
Chassis Mount
Lead Free :
Contains Lead
Turn Off Time-Nom (toff) :
620 ns
Operating Temperature :
-40°C~150°C
Datasheets
FP35R12KT4BOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FP35R12KT4BOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:23, Package / Case:Module, Number of Pins:23, Mounting Type:Chassis Mount, Operating Temperature:-40°C~150°C, FP35R12KT4BOSA1 pinout, FP35R12KT4BOSA1 datasheet PDF, FP35R12KT4BOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FP35R12KT4BOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies FP35R12KT4BOSA1


FP35R12KT4BOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FP35R12KT4BOSA1 Description

 

FP35R12KT4BOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FP35R12KT4BOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FP35R12KT4BOSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FP35R12KT4BOSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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