FMA9AT148

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-55°C

Resistor - Emitter Base (R2) :

10k Ω

Max Operating Temperature :

150°C

Emitter Base Voltage (VEBO) :

-5V

Configuration :

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR

Frequency - Transition :

250MHz

VCEsat-Max :

0.3 V

Polarity :

PNP

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Collector Emitter Breakdown Voltage :

50V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Max Power Dissipation :

300mW

Max Output Current :

100mA

Mount :

Surface Mount

JESD-609 Code :

e1

Pin Count :

5

hFE Min :

30

Voltage - Rated DC :

-50V

Factory Lead Time :

13 Weeks

Max Collector Current :

100mA

Collector Emitter Voltage (VCEO) :

300mV

Transistor Type :

2 PNP - Pre-Biased (Dual)

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

10

Number of Pins :

5

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

MA9

Lead Free :

Lead Free

Power Dissipation :

300mW

Current Rating :

-50mA

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Height :

900μm

Max Breakdown Voltage :

50V

ECCN Code :

EAR99

Operating Supply Voltage :

50V

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Number of Terminations :

5

Number of Elements :

2

Length :

2.1mm

Package / Case :

SC-74A, SOT-753

Continuous Collector Current :

-50mA

Published :

2005

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Width :

1.35mm

Transition Frequency :

250MHz

Resistor - Base (R1) :

10k Ω

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)