FJV4114RMTF

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Package / Case :

TO-236-3, SC-59, SOT-23-3

Terminal Position :

Dual

Factory Lead Time :

14 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistor - Emitter Base (R2) :

47 k Ω

Frequency - Transition :

200MHz

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Polarity :

PNP

Voltage - Rated DC :

-50V

Current Rating :

-100mA

Collector Base Voltage (VCBO) :

50V

Continuous Collector Current :

-100mA

Mount :

Surface Mount

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

hFE Min :

68

Lead Free :

Lead Free

Resistor - Base (R1) :

4.7 k Ω

Transition Frequency :

200MHz

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Emitter Base Voltage (VEBO) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Max Power Dissipation :

200mW

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Current - Collector Cutoff (Max) :

100nA ICBO

Additional Feature :

BUILT IN BIAS RESISTOR RATIO IS 10

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Base Part Number :

FJV4114

Qualification Status :

Not Qualified

Max Collector Current :

100mA

JESD-609 Code :

e3

Min Operating Temperature :

-55°C

Transistor Type :

PNP - Pre-Biased

Terminal Finish :

Tin (Sn)

Max Operating Temperature :

150°C

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

50V

Pbfree Code :

yes

Weight :

30mg

Number of Elements :

1

Mounting Type :

Surface Mount

Element Configuration :

Single

ECCN Code :

EAR99

Published :

2015

Power Dissipation :

200mW

HTS Code :

8541.21.00.95

Collector Emitter Breakdown Voltage :

50V