FJV4101RMTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Single, Pre-Biased

Max Power Dissipation :

200mW

Element Configuration :

Single

Transition Frequency :

200MHz

Height :

930μm

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 10mA 5V

Collector Emitter Voltage (VCEO) :

50V

Terminal Position :

Dual

Current Rating :

-100mA

Number of Terminations :

3

Max Collector Current :

100mA

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Resistor - Emitter Base (R2) :

4.7 k Ω

Collector Emitter Breakdown Voltage :

50V

Terminal Finish :

Tin (Sn)

Frequency - Transition :

200MHz

Min Operating Temperature :

-55°C

Number of Elements :

1

Power Dissipation :

200mW

RoHS Status :

RoHS Compliant

Published :

2013

Package / Case :

TO-236-3, SC-59, SOT-23-3

JESD-609 Code :

e3

ECCN Code :

EAR99

Mount :

Surface Mount

Pbfree Code :

yes

Mounting Type :

Surface Mount

Number of Pins :

3

Current - Collector Cutoff (Max) :

100nA ICBO

Width :

1.3mm

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Transistor Type :

PNP - Pre-Biased

Collector Emitter Saturation Voltage :

-300mV

hFE Min :

20

Radiation Hardening :

No

Resistor - Base (R1) :

4.7 k Ω

Voltage - Rated DC :

-50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Breakdown Voltage :

50V

Packaging :

Tape and Reel (TR)

Collector Base Voltage (VCBO) :

-50V

Emitter Base Voltage (VEBO) :

-10V

HTS Code :

8541.21.00.95

Max Operating Temperature :

150°C

Continuous Collector Current :

-100mA

Lead Free :

Lead Free

Base Part Number :

FJV4101

Weight :

30mg

Polarity :

PNP

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Length :

2.92mm