FJP2160DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Vce Saturation (Max) @ Ib, Ic :

750mV @ 330mA, 1A

Polarity/Channel Type :

NPN

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~125°C TJ

JESD-609 Code :

e3

Current - Collector Cutoff (Max) :

100μA

Mount :

Through Hole

Pbfree Code :

yes

Frequency - Transition :

5MHz

Transition Frequency :

25MHz

Packaging :

Tube

Mounting Type :

Through Hole

Number of Pins :

3

Weight :

1.8g

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

12V

Terminal Position :

Single

Collector Emitter Breakdown Voltage :

800V

Transistor Application :

SWITCHING

Length :

9.9mm

Published :

2012

Gate to Source Voltage (Vgs) :

20V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 400mA 3V

Max Collector Current :

2A

HTS Code :

8541.29.00.95

Collector Base Voltage (VCBO) :

1.6kV

Factory Lead Time :

6 Weeks

Radiation Hardening :

No

Width :

4.5mm

Max Power Dissipation :

100W

Transistor Type :

NPN

Height :

15.95mm

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Series :

ESBC™

Number of Elements :

1

Lead Free :

Lead Free

Power - Max :

100W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

hFE Min :

20

Configuration :

SINGLE WITH BUILT-IN FET AND DIODE

Collector Emitter Voltage (VCEO) :

800V

Number of Terminations :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)