FJP2145TU
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- Mfr.Part #
- FJP2145TU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Collector Emitter Voltage (VCEO) :
- 800V
- Weight :
- 1.8g
- Max Collector Current :
- 5A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Element Configuration :
- Single
- Published :
- 2013
- Collector Emitter Saturation Voltage :
- 151mV
- Width :
- 4.83mm
- hFE Min :
- 20
- Gate to Source Voltage (Vgs) :
- 20V
- Mount :
- Through Hole
- Packaging :
- Tube
- Max Power Dissipation :
- 120W
- Emitter Base Voltage (VEBO) :
- 7V
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 120W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Height :
- 16.51mm
- Collector Base Voltage (VCBO) :
- 1.1kV
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~125°C TJ
- Package / Case :
- TO-220-3
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Series :
- ESBC™
- Number of Terminations :
- 3
- Transition Frequency :
- 28.4MHz
- Transistor Application :
- SWITCHING
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Breakdown Voltage :
- 800V
- Gain Bandwidth Product :
- 15MHz
- Mounting Type :
- Through Hole
- Length :
- 10.67mm
- Factory Lead Time :
- 7 Weeks
- ECCN Code :
- EAR99
- Datasheets
- FJP2145TU
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP2145TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 151mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 28.4MHz.During maximum operation, collector current can be as low as 5A volts.
FJP2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 151mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJP2145TU Applications
There are a lot of ON Semiconductor
FJP2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJP2145TU | Fairchild Semiconductor | 19 | TRANS NPN 800V 5A TO220-3 |
| FJP2160DTU | Fairchild Semiconductor | 43,000 | TRANS NPN 800V 2A TO220-3 |
| FJP2160DTU | Fairchild Semiconductor | 2,815 | TRANS NPN 800V 2A TO220-3 |
| FJP2160DTU | Fairchild Semiconductor | 8,605 | TRANS NPN 800V 2A TO220-3 |
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