FJP2145TU
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- Mfr.Part #
- FJP2145TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Through Hole
- Length :
- 10.67mm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 120W
- Operating Temperature :
- -55°C~125°C TJ
- Max Power Dissipation :
- 120W
- Element Configuration :
- Single
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 800V
- Mount :
- Through Hole
- Polarity/Channel Type :
- NPN
- Transistor Application :
- SWITCHING
- Emitter Base Voltage (VEBO) :
- 7V
- Series :
- ESBC™
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 1.1kV
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 20
- Radiation Hardening :
- No
- Published :
- 2013
- Collector Emitter Saturation Voltage :
- 151mV
- Transistor Element Material :
- SILICON
- Weight :
- 1.8g
- Height :
- 16.51mm
- Package / Case :
- TO-220-3
- ECCN Code :
- EAR99
- Width :
- 4.83mm
- Gain Bandwidth Product :
- 15MHz
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 800V
- Transition Frequency :
- 28.4MHz
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Max Collector Current :
- 5A
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Factory Lead Time :
- 7 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Datasheets
- FJP2145TU
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP2145TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 151mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 28.4MHz.During maximum operation, collector current can be as low as 5A volts.
FJP2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 151mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJP2145TU Applications
There are a lot of ON Semiconductor
FJP2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
| FJP2145TU | onsemi | 19 | TRANS NPN 800V 5A TO220-3 |
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| FJP2160DTU | onsemi | 2,815 | TRANS NPN 800V 2A TO220-3 |
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