FJP2145TU
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- Mfr.Part #
- FJP2145TU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN 800V 5A TO220-3
- Stock
- 19
- In Stock ：
- 19
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 120W
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Max Power Dissipation :
- 120W
- Length :
- 10.67mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 1.1kV
- Package / Case :
- TO-220-3
- Width :
- 4.83mm
- Transition Frequency :
- 28.4MHz
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- Vce Saturation (Max) @ Ib, Ic :
- 2V @ 300mA, 1.5A
- Mount :
- Through Hole
- Weight :
- 1.8g
- Operating Temperature :
- -55°C~125°C TJ
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Voltage (VCEO) :
- 800V
- Published :
- 2013
- hFE Min :
- 20
- Max Collector Current :
- 5A
- Series :
- ESBC™
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 7V
- Pbfree Code :
- yes
- Factory Lead Time :
- 7 Weeks
- Gain Bandwidth Product :
- 15MHz
- Collector Emitter Saturation Voltage :
- 151mV
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 800V
- Packaging :
- Tube
- Height :
- 16.51mm
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20 @ 200mA 5V
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Datasheets
- FJP2145TU
FJP2145TU Documents
NPN -55°C~125°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Tube Through Hole
FJP2145TU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 200mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 151mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2V @ 300mA, 1.5A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 28.4MHz.During maximum operation, collector current can be as low as 5A volts.
FJP2145TU Features
the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 151mV
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
a transition frequency of 28.4MHz
FJP2145TU Applications
There are a lot of ON Semiconductor
FJP2145TU applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJP2145TU | onsemi | 19 | TRANS NPN 800V 5A TO220-3 |
| FJP2160DTU | onsemi | 43,000 | TRANS NPN 800V 2A TO220-3 |
| FJP2160DTU | onsemi | 2,815 | TRANS NPN 800V 2A TO220-3 |
| FJP2160DTU | onsemi | 8,605 | TRANS NPN 800V 2A TO220-3 |
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