FJP2160DTU

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Weight :

1.8g

hFE Min :

20

Max Power Dissipation :

100W

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Transition Frequency :

25MHz

Published :

2012

Collector Base Voltage (VCBO) :

1.6kV

Collector Emitter Voltage (VCEO) :

800V

DC Current Gain (hFE) (Min) @ Ic, Vce :

20 @ 400mA 3V

Emitter Base Voltage (VEBO) :

12V

RoHS Status :

ROHS3 Compliant

Width :

4.5mm

Max Collector Current :

2A

Power - Max :

100W

Height :

15.95mm

Lead Free :

Lead Free

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Number of Elements :

1

Packaging :

Tube

Vce Saturation (Max) @ Ib, Ic :

750mV @ 330mA, 1A

Terminal Position :

Single

Radiation Hardening :

No

Operating Temperature :

-55°C~125°C TJ

Current - Collector Cutoff (Max) :

100μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

3

Mount :

Through Hole

Frequency - Transition :

5MHz

Length :

9.9mm

Transistor Type :

NPN

JESD-609 Code :

e3

Package / Case :

TO-220-3

Series :

ESBC™

Factory Lead Time :

6 Weeks

Collector Emitter Breakdown Voltage :

800V

Configuration :

SINGLE WITH BUILT-IN FET AND DIODE

Pbfree Code :

yes

HTS Code :

8541.29.00.95

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Polarity/Channel Type :

NPN

Number of Pins :

3

Terminal Finish :

Tin (Sn)