FJD3305H1TM

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

19

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

1.1W

Max Collector Current :

4A

Power Dissipation :

1.1W

Terminal Finish :

Tin (Sn)

Max Breakdown Voltage :

400V

Radiation Hardening :

No

Transition Frequency :

4MHz

Factory Lead Time :

2 Weeks

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

1V @ 1A, 4A

JEDEC-95 Code :

TO-252AA

RoHS Status :

ROHS3 Compliant

Base Part Number :

FJD3305

Transistor Application :

SWITCHING

JESD-30 Code :

R-PSSO-G2

Polarity/Channel Type :

NPN

Mounting Type :

Surface Mount

Collector Emitter Breakdown Voltage :

400V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Terminations :

2

Gain Bandwidth Product :

4MHz

Emitter Base Voltage (VEBO) :

9V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current - Collector Cutoff (Max) :

1μA ICBO

Element Configuration :

Single

Operating Temperature :

150°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Frequency :

4MHz

DC Current Gain (hFE) (Min) @ Ic, Vce :

8 @ 2A 5V

Collector Emitter Saturation Voltage :

1V

Collector Base Voltage (VCBO) :

700V

Mount :

Surface Mount

Weight :

260.37mg

Collector Emitter Voltage (VCEO) :

400V

Packaging :

Tape and Reel (TR)

Transistor Type :

NPN

Published :

2016

Number of Elements :

1

Pbfree Code :

yes