FJD3305H1TM

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Mfr.Part #
FJD3305H1TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
TRANS NPN 400V 4A TO252AA
Stock
1,245
In Stock :
1,245

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Number of Elements :
1
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
Collector Emitter Breakdown Voltage :
400V
Emitter Base Voltage (VEBO) :
9V
Transition Frequency :
4MHz
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Max Power Dissipation :
1.1W
Polarity/Channel Type :
NPN
Current - Collector Cutoff (Max) :
1μA ICBO
Collector Base Voltage (VCBO) :
700V
Mount :
Surface Mount
Operating Temperature :
150°C TJ
Number of Pins :
3
Max Collector Current :
4A
Max Breakdown Voltage :
400V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Pbfree Code :
yes
Element Configuration :
Single
Collector Emitter Voltage (VCEO) :
400V
JESD-30 Code :
R-PSSO-G2
Number of Terminations :
2
RoHS Status :
ROHS3 Compliant
Transistor Type :
NPN
JEDEC-95 Code :
TO-252AA
Terminal Form :
Gull wing
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Terminal Finish :
Tin (Sn)
JESD-609 Code :
e3
Radiation Hardening :
No
Vce Saturation (Max) @ Ib, Ic :
1V @ 1A, 4A
Collector Emitter Saturation Voltage :
1V
DC Current Gain (hFE) (Min) @ Ic, Vce :
8 @ 2A 5V
ECCN Code :
EAR99
Factory Lead Time :
2 Weeks
Published :
2016
Weight :
260.37mg
Power Dissipation :
1.1W
hFE Min :
19
Frequency :
4MHz
Gain Bandwidth Product :
4MHz
Base Part Number :
FJD3305
Datasheets
FJD3305H1TM
Introducing Transistors - Bipolar (BJT) - Single onsemi FJD3305H1TM from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:150°C TJ, Number of Pins:3, Number of Terminations:2, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Base Part Number:FJD3305, FJD3305H1TM pinout, FJD3305H1TM datasheet PDF, FJD3305H1TM amp .Beyond Transistors - Bipolar (BJT) - Single onsemi FJD3305H1TM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FJD3305H1TM


NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount

FJD3305H1TM Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 8 @ 2A 5V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 400V volts.When collector current reaches its maximum, it can reach 4A volts.

FJD3305H1TM Features


the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


FJD3305H1TM Applications


There are a lot of ON Semiconductor
FJD3305H1TM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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