FJD3305H1TM
- Mfr.Part #
- FJD3305H1TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 400V 4A TO252AA
- Stock
- 1,245
- In Stock :
- 1,245
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Breakdown Voltage :
- 400V
- Emitter Base Voltage (VEBO) :
- 9V
- Transition Frequency :
- 4MHz
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 1.1W
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Base Voltage (VCBO) :
- 700V
- Mount :
- Surface Mount
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Max Collector Current :
- 4A
- Max Breakdown Voltage :
- 400V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 400V
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- JEDEC-95 Code :
- TO-252AA
- Terminal Form :
- Gull wing
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Finish :
- Tin (Sn)
- JESD-609 Code :
- e3
- Radiation Hardening :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 1A, 4A
- Collector Emitter Saturation Voltage :
- 1V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 8 @ 2A 5V
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Published :
- 2016
- Weight :
- 260.37mg
- Power Dissipation :
- 1.1W
- hFE Min :
- 19
- Frequency :
- 4MHz
- Gain Bandwidth Product :
- 4MHz
- Base Part Number :
- FJD3305
- Datasheets
- FJD3305H1TM

NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
FJD3305H1TM Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 8 @ 2A 5V DC current gain.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 9V can result in a high level of efficiency.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 400V volts.When collector current reaches its maximum, it can reach 4A volts.
FJD3305H1TM Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 1A, 4A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz
FJD3305H1TM Applications
There are a lot of ON Semiconductor
FJD3305H1TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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