FJD3076TM
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- Mfr.Part #
- FJD3076TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A DPAK
- Stock
- 43,758
- In Stock ：
- 43,758
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Contact Plating :
- Tin
- Max Power Dissipation :
- 1W
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Element Configuration :
- Single
- Weight :
- 260.37mg
- Width :
- 6.1mm
- Max Breakdown Voltage :
- 80V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Collector Current :
- 2A
- Collector Emitter Breakdown Voltage :
- 32V
- Number of Pins :
- 3
- Mount :
- Surface Mount
- Current Rating :
- 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Collector Emitter Saturation Voltage :
- 800mV
- Pbfree Code :
- yes
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 130
- Power Dissipation :
- 1W
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 100MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 130 @ 500mA 3V
- Published :
- 2001
- Height :
- 2.3mm
- Voltage - Rated DC :
- 32V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- JESD-30 Code :
- R-PSSO-G2
- Collector Base Voltage (VCBO) :
- 40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Base Part Number :
- FJD3076
- Length :
- 6.6mm
- Frequency :
- 100MHz
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 32V
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 5V
- JESD-609 Code :
- e3
- Number of Terminations :
- 2
- Datasheets
- FJD3076TM
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NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
FJD3076TM Overview
In this device, the DC current gain is 130 @ 500mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
FJD3076TM Features
the DC current gain for this device is 130 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
FJD3076TM Applications
There are a lot of ON Semiconductor
FJD3076TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJD3076TF | onsemi | 11,826 | TRANS NPN 32V 2A DPAK |
| FJD3076TM | onsemi | 43,758 | TRANS NPN 32V 2A DPAK |
| FJD3305H1TM | onsemi | 1,245 | TRANS NPN 400V 4A TO252AA |
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