FJD3076TF
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- Mfr.Part #
- FJD3076TF
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A DPAK
- Stock
- 11,826
- In Stock ：
- 11,826
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- 150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Supplier Device Package :
- D-Pak
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Current - Collector (Ic) (Max) :
- 2A
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Packaging :
- Tape and Reel (TR)
- Mounting Type :
- Surface Mount
- Base Part Number :
- FJD3076
- Voltage - Collector Emitter Breakdown (Max) :
- 32V
- Frequency - Transition :
- 100MHz
- Transistor Type :
- NPN
- Power - Max :
- 1W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 130 @ 500mA 3V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FJD3076TF
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NPN 150°C TJ 1μA ICBO TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
FJD3076TF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 130 @ 500mA 3V.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 800mV @ 200mA, 2A.The product comes in the supplier device package of D-Pak.A 32V maximal voltage - Collector Emitter Breakdown is present in the device.
FJD3076TF Features
the DC current gain for this device is 130 @ 500mA 3V
the vce saturation(Max) is 800mV @ 200mA, 2A
the supplier device package of D-Pak
FJD3076TF Applications
There are a lot of ON Semiconductor
FJD3076TF applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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