FJD3076TM
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- Mfr.Part #
- FJD3076TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A DPAK
- Stock
- 43,758
- In Stock ：
- 43,758
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Collector Emitter Voltage (VCEO) :
- 32V
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 40V
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Packaging :
- Tape and Reel (TR)
- Power Dissipation :
- 1W
- Gain Bandwidth Product :
- 100MHz
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 130
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 80V
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Operating Temperature :
- 150°C TJ
- Frequency :
- 100MHz
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Published :
- 2001
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Max Collector Current :
- 2A
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Base Part Number :
- FJD3076
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Terminal Form :
- Gull wing
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-30 Code :
- R-PSSO-G2
- Length :
- 6.6mm
- Width :
- 6.1mm
- Voltage - Rated DC :
- 32V
- Collector Emitter Breakdown Voltage :
- 32V
- Max Power Dissipation :
- 1W
- Transistor Application :
- AMPLIFIER
- Mounting Type :
- Surface Mount
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 130 @ 500mA 3V
- Current Rating :
- 2A
- Weight :
- 260.37mg
- JESD-609 Code :
- e3
- Collector Emitter Saturation Voltage :
- 800mV
- Height :
- 2.3mm
- Number of Elements :
- 1
- Datasheets
- FJD3076TM
FJD3076TM Documents
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
FJD3076TM Overview
In this device, the DC current gain is 130 @ 500mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
FJD3076TM Features
the DC current gain for this device is 130 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
FJD3076TM Applications
There are a lot of ON Semiconductor
FJD3076TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJD3076TF | Fairchild Semiconductor | 11,826 | TRANS NPN 32V 2A DPAK |
| FJD3076TM | Fairchild Semiconductor | 43,758 | TRANS NPN 32V 2A DPAK |
| FJD3305H1TM | Fairchild Semiconductor | 1,245 | TRANS NPN 400V 4A TO252AA |
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