FJD3076TM
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- Mfr.Part #
- FJD3076TM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- TRANS NPN 32V 2A DPAK
- Stock
- 43,758
- In Stock ：
- 43,758
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 130 @ 500mA 3V
- Mount :
- Surface Mount
- Transition Frequency :
- 100MHz
- Base Part Number :
- FJD3076
- Voltage - Rated DC :
- 32V
- Operating Temperature :
- 150°C TJ
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Power Dissipation :
- 1W
- Frequency :
- 100MHz
- hFE Min :
- 130
- Number of Terminations :
- 2
- Packaging :
- Tape and Reel (TR)
- Max Collector Current :
- 2A
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 32V
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 40V
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Radiation Hardening :
- No
- Length :
- 6.6mm
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Contact Plating :
- Tin
- Width :
- 6.1mm
- Weight :
- 260.37mg
- Lead Free :
- Lead Free
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Max Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 800mV @ 200mA, 2A
- Number of Pins :
- 3
- Transistor Application :
- AMPLIFIER
- Height :
- 2.3mm
- Gain Bandwidth Product :
- 100MHz
- Max Power Dissipation :
- 1W
- Current - Collector Cutoff (Max) :
- 1μA ICBO
- Mounting Type :
- Surface Mount
- Polarity/Channel Type :
- NPN
- Transistor Element Material :
- SILICON
- Current Rating :
- 2A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2001
- Collector Emitter Breakdown Voltage :
- 32V
- Collector Emitter Saturation Voltage :
- 800mV
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- Datasheets
- FJD3076TM
FJD3076TM Documents
NPN 150°C TJ 1μA ICBO 1 Elements 2 Terminations SILICON NPN TO-252-3, DPak (2 Leads + Tab), SC-63 Tape & Reel (TR) Surface Mount
FJD3076TM Overview
In this device, the DC current gain is 130 @ 500mA 3V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 800mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 800mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
FJD3076TM Features
the DC current gain for this device is 130 @ 500mA 3V
a collector emitter saturation voltage of 800mV
the vce saturation(Max) is 800mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 100MHz
FJD3076TM Applications
There are a lot of ON Semiconductor
FJD3076TM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FJD3076TF | Fairchild Semiconductor | 11,826 | TRANS NPN 32V 2A DPAK |
| FJD3076TM | Fairchild Semiconductor | 43,758 | TRANS NPN 32V 2A DPAK |
| FJD3305H1TM | Fairchild Semiconductor | 1,245 | TRANS NPN 400V 4A TO252AA |
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