FGPF7N60RUFDTU
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- Mfr.Part #
- FGPF7N60RUFDTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 14A 41W TO220F
- Stock
- 14,744
- In Stock ：
- 14,744
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Package / Case :
- TO-220-3 Full Pack
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 7A
- Collector Emitter Saturation Voltage :
- 1.95V
- Gate Charge :
- 24nC
- Max Power Dissipation :
- 41W
- Switching Energy :
- 230μJ (on), 100μJ (off)
- Reverse Recovery Time :
- 65ns
- Input Type :
- Standard
- Voltage - Rated DC :
- 600V
- Current Rating :
- 14A
- Test Condition :
- 300V, 7A, 30 Ω, 15V
- Power Dissipation :
- 41W
- Td (on/off) @ 25°C :
- 60ns/60ns
- Max Collector Current :
- 14A
- Mount :
- Through Hole
- Element Configuration :
- Single
- Number of Pins :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 600V
- RoHS Status :
- RoHS Compliant
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Voltage (VCEO) :
- 600V
- Termination :
- Through Hole
- Published :
- 2004
- Rise Time :
- 60ns
- Current - Collector Pulsed (Icm) :
- 21A
- Packaging :
- Tube
- Datasheets
- FGPF7N60RUFDTU
FGPF7N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGPF7N60RUFDTU Description
The FGPF7N60RUFDTU is an Insulated Gate Bipolar Transistor (IGBT) that provides low conduction and switching losses designed for Motor applications where ruggedness is a required feature.
FGPF7N60RUFDTU Features
High-speed switching
Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A
High input impedance
CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V
FGPF7N60RUFDTU Applications
-
Motor controls and general purpose inverters
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