FGPF7N60RUFDTU
- Mfr.Part #
- FGPF7N60RUFDTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 600V 14A 41W TO220F
- Stock
- 14,744
- In Stock :
- 14,744
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Termination :
- Through Hole
- Package / Case :
- TO-220-3 Full Pack
- Collector Emitter Saturation Voltage :
- 1.95V
- Td (on/off) @ 25°C :
- 60ns/60ns
- Input Type :
- Standard
- Voltage - Rated DC :
- 600V
- Mount :
- Through Hole
- Reverse Recovery Time :
- 65ns
- Switching Energy :
- 230μJ (on), 100μJ (off)
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 14A
- Lead Free :
- Lead Free
- Current Rating :
- 14A
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 7A
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Rise Time :
- 60ns
- Current - Collector Pulsed (Icm) :
- 21A
- Collector Emitter Voltage (VCEO) :
- 600V
- Power Dissipation :
- 41W
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 600V
- Number of Pins :
- 3
- Max Power Dissipation :
- 41W
- Published :
- 2004
- Gate Charge :
- 24nC
- Test Condition :
- 300V, 7A, 30 Ω, 15V
- Datasheets
- FGPF7N60RUFDTU
FGPF7N60RUFDTU Documents

FGPF7N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGPF7N60RUFDTU Description
The FGPF7N60RUFDTU is an Insulated Gate Bipolar Transistor (IGBT) that provides low conduction and switching losses designed for Motor applications where ruggedness is a required feature.
FGPF7N60RUFDTU Features
High-speed switching
Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A
High input impedance
CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V
FGPF7N60RUFDTU Applications
-
Motor controls and general purpose inverters
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