FGPF15N60UNDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Gate-Emitter Thr Voltage-Max :

8.5V

Width :

2.74mm

Number of Terminations :

3

Transistor Application :

Motor Control

Gate Charge :

43nC

Number of Elements :

1

Case Connection :

Isolated

Height :

16.07mm

Weight :

2.27g

Td (on/off) @ 25°C :

9.3ns/54.8ns

Collector Emitter Voltage (VCEO) :

600V

Pbfree Code :

yes

Switching Energy :

370μJ (on), 67μJ (off)

Mounting Type :

Through Hole

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Lifecycle Status :

ACTIVE (Last Updated: 2 hours ago)

Power - Max :

42W

Radiation Hardening :

No

Element Configuration :

Single

Turn On Time :

18.8 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 15A

Published :

2013

Package / Case :

TO-220-3 Full Pack

Factory Lead Time :

13 Weeks

Input Type :

Standard

HTS Code :

8541.29.00.95

Collector Emitter Breakdown Voltage :

600V

JEDEC-95 Code :

TO-220AB

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Packaging :

Tube

Terminal Finish :

Tin (Sn)

Reverse Recovery Time :

82.4 ns

Turn Off Time-Nom (toff) :

69.8 ns

Mount :

Through Hole

Max Power Dissipation :

42W

Current - Collector Pulsed (Icm) :

45A

IGBT Type :

NPT

Fall Time-Max (tf) :

12.8ns

Length :

10.36mm

Collector Emitter Saturation Voltage :

2.2V

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Test Condition :

400V, 15A, 10 Ω, 15V

Max Collector Current :

30A