FGPF10N60UNDF

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Reverse Recovery Time :

37.7 ns

Turn On Time :

15.4 ns

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Current - Collector Pulsed (Icm) :

30A

HTS Code :

8541.29.00.95

Fall Time-Max (tf) :

24.8ns

Transistor Element Material :

SILICON

Test Condition :

400V, 10A, 10 Ω, 15V

Radiation Hardening :

No

Number of Terminations :

3

Gate Charge :

37nC

Case Connection :

Isolated

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Weight :

2.27g

Switching Energy :

150μJ (on), 50μJ (off)

Length :

10.36mm

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

600V

Max Power Dissipation :

42W

Collector Emitter Saturation Voltage :

2V

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Transistor Application :

Motor Control

Element Configuration :

Single

Td (on/off) @ 25°C :

8ns/52.2ns

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

600V

Width :

4.9mm

JEDEC-95 Code :

TO-220AB

Gate-Emitter Thr Voltage-Max :

8.5V

Packaging :

Tube

Power - Max :

42W

Package / Case :

TO-220-3 Full Pack

Published :

2013

IGBT Type :

NPT

Factory Lead Time :

5 Weeks

Number of Elements :

1

Gate-Emitter Voltage-Max :

20V

Vce(on) (Max) @ Vge, Ic :

2.45V @ 15V, 10A

Turn Off Time-Nom (toff) :

89.3 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

16.07mm

Operating Temperature :

-55°C~150°C TJ

Max Collector Current :

20A

Number of Pins :

3

Input Type :

Standard