FGPF7N60RUFDTU
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- Mfr.Part #
- FGPF7N60RUFDTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- N-CHANNEL IGBT
- Stock
- 1,886
- In Stock ：
- 1,886
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Mounting Type :
- Through Hole
- REACH SVHC :
- No SVHC
- Rise Time :
- 60ns
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 2.8V @ 15V, 7A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 14A
- Max Power Dissipation :
- 41W
- Operating Temperature :
- -55°C~150°C TJ
- Termination :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Gate Charge :
- 24nC
- Power Dissipation :
- 41W
- Input Type :
- Standard
- Voltage - Rated DC :
- 600V
- Mount :
- Through Hole
- Current Rating :
- 14A
- Current - Collector Pulsed (Icm) :
- 21A
- Package / Case :
- TO-220-3 Full Pack
- Switching Energy :
- 230μJ (on), 100μJ (off)
- Collector Emitter Breakdown Voltage :
- 600V
- Element Configuration :
- Single
- Test Condition :
- 300V, 7A, 30 Ω, 15V
- Td (on/off) @ 25°C :
- 60ns/60ns
- Collector Emitter Voltage (VCEO) :
- 600V
- Reverse Recovery Time :
- 65ns
- Collector Emitter Saturation Voltage :
- 1.95V
- Number of Pins :
- 3
- Published :
- 2004
- Packaging :
- Tube
- Datasheets
- FGPF7N60RUFDTU
FGPF7N60RUFDTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGPF7N60RUFDTU Description
The FGPF7N60RUFDTU is an Insulated Gate Bipolar Transistor (IGBT) that provides low conduction and switching losses designed for Motor applications where ruggedness is a required feature.
FGPF7N60RUFDTU Features
High-speed switching
Low saturation voltage : VCE(sat) = 1.95 V @ IC = 7A
High input impedance
CO-PAK, IGBT with FRD : trr = 50 ns (typ.)
Short Circuit rated, 10us @ TC=100°C, VGE=15V, VCE=300V
FGPF7N60RUFDTU Applications
-
Motor controls and general purpose inverters
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