FGPF70N33BTTU
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- Mfr.Part #
- FGPF70N33BTTU
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT, 330V, N-CHANNEL, TO-220AB
- Stock
- 3,950
- In Stock ：
- 3,950
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Element Configuration :
- Single
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Max Power Dissipation :
- 48W
- Package / Case :
- TO-220-3 Full Pack
- Collector Emitter Breakdown Voltage :
- 330V
- Packaging :
- Tube
- Weight :
- 2.27g
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge :
- 49nC
- IGBT Type :
- Trench
- Operating Temperature :
- -55°C~150°C TJ
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 330V
- Vce(on) (Max) @ Vge, Ic :
- 1.7V @ 15V, 70A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Current - Collector Pulsed (Icm) :
- 220A
- Datasheets
- FGPF70N33BTTU
FGPF70N33BTTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGPF70N33BTTU Description
FGPF70N33BTTU transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGPF70N33BTTU MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
FGPF70N33BTTU Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
FGPF70N33BTTU Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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