FGPF70N30TTU
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- Mfr.Part #
- FGPF70N30TTU
- Manufacturer
- onsemi
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- IGBT 300V 49.2W TO220F
- Stock
- 17,946
- In Stock ：
- 17,946
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Collector Emitter Voltage (VCEO) :
- 300V
- Package / Case :
- TO-220-3 Full Pack
- Current - Collector Pulsed (Icm) :
- 160A
- Mount :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 300V
- Packaging :
- Tube
- Input Type :
- Standard
- Vce(on) (Max) @ Vge, Ic :
- 1.5V @ 15V, 20A
- Mounting Type :
- Through Hole
- IGBT Type :
- Trench
- Max Power Dissipation :
- 49.2W
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Gate Charge :
- 125nC
- Number of Pins :
- 3
- Datasheets
- FGPF70N30TTU
FGPF70N30TTU datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGPF70N30TTU Description
FGPF70N30TTU transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGPF70N30TTU MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
FGPF70N30TTU Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
FGPF70N30TTU Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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