FGP5N60LS

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Gate-Emitter Voltage-Max :

20V

Test Condition :

400V, 5A, 10 Ω, 15V

IGBT Type :

Field Stop

Operating Temperature :

-55°C~150°C TJ

Additional Feature :

LOW CONDUCTION LOSS

Package / Case :

TO-220-3

Current - Collector Pulsed (Icm) :

36A

Polarity/Channel Type :

N-Channel

Length :

10.67mm

Pbfree Code :

yes

Gate Charge :

18.3nC

Factory Lead Time :

4 Weeks

ECCN Code :

EAR99

Number of Elements :

1

Transistor Application :

GENERAL PURPOSE SWITCHING

Collector Emitter Saturation Voltage :

1.8V

Element Configuration :

Single

Max Collector Current :

10A

Td (on/off) @ 25°C :

4.3ns/36ns

RoHS Status :

ROHS3 Compliant

Gate-Emitter Thr Voltage-Max :

4.5V

Mounting Type :

Through Hole

Turn On Time :

5.9 ns

Turn Off Time-Nom (toff) :

187 ns

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

600V

Max Power Dissipation :

83W

Weight :

1.8g

Power - Max :

83W

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Switching Energy :

38μJ (on), 130μJ (off)

Mount :

Through Hole

Width :

4.83mm

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Radiation Hardening :

No

HTS Code :

8541.29.00.95

REACH SVHC :

No SVHC

Number of Terminations :

3

Published :

2013

JEDEC-95 Code :

TO-220AB

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Input Type :

Standard

Collector Emitter Breakdown Voltage :

600V

Packaging :

Tube

Height :

16.51mm

Vce(on) (Max) @ Vge, Ic :

3.2V @ 12V, 14A