FGP5N60LS

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Tin (Sn)

Max Power Dissipation :

83W

Gate Charge :

18.3nC

Operating Temperature :

-55°C~150°C TJ

HTS Code :

8541.29.00.95

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Length :

10.67mm

ECCN Code :

EAR99

Pbfree Code :

yes

IGBT Type :

Field Stop

Switching Energy :

38μJ (on), 130μJ (off)

Height :

16.51mm

Turn Off Time-Nom (toff) :

187 ns

Collector Emitter Saturation Voltage :

1.8V

Current - Collector Pulsed (Icm) :

36A

Transistor Application :

GENERAL PURPOSE SWITCHING

JESD-609 Code :

e3

Number of Elements :

1

Collector Emitter Breakdown Voltage :

600V

Mount :

Through Hole

Turn On Time :

5.9 ns

Element Configuration :

Single

Radiation Hardening :

No

Test Condition :

400V, 5A, 10 Ω, 15V

Mounting Type :

Through Hole

Number of Terminations :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

Max Collector Current :

10A

Factory Lead Time :

4 Weeks

Td (on/off) @ 25°C :

4.3ns/36ns

Published :

2013

Transistor Element Material :

SILICON

Width :

4.83mm

Package / Case :

TO-220-3

Polarity/Channel Type :

N-Channel

JEDEC-95 Code :

TO-220AB

RoHS Status :

ROHS3 Compliant

Vce(on) (Max) @ Vge, Ic :

3.2V @ 12V, 14A

Power - Max :

83W

Additional Feature :

LOW CONDUCTION LOSS

Gate-Emitter Thr Voltage-Max :

4.5V

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

600V

Gate-Emitter Voltage-Max :

20V

REACH SVHC :

No SVHC

Weight :

1.8g