FGP5N60LS
- Mfr.Part #
- FGP5N60LS
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT FIELD STOP 600V 10A TO220-3
- Stock
- 2,211
- In Stock :
- 2,211
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 1.8V
- ECCN Code :
- EAR99
- Transistor Application :
- GENERAL PURPOSE SWITCHING
- Turn On Time :
- 5.9 ns
- Number of Terminations :
- 3
- Package / Case :
- TO-220-3
- Test Condition :
- 400V, 5A, 10 Ω, 15V
- Weight :
- 1.8g
- Max Collector Current :
- 10A
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Width :
- 4.83mm
- Input Type :
- Standard
- Transistor Element Material :
- SILICON
- Vce(on) (Max) @ Vge, Ic :
- 3.2V @ 12V, 14A
- JESD-609 Code :
- e3
- Gate-Emitter Thr Voltage-Max :
- 4.5V
- Switching Energy :
- 38μJ (on), 130μJ (off)
- Turn Off Time-Nom (toff) :
- 187 ns
- IGBT Type :
- Field Stop
- Height :
- 16.51mm
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- No SVHC
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Element Configuration :
- Single
- HTS Code :
- 8541.29.00.95
- Length :
- 10.67mm
- Pbfree Code :
- yes
- Published :
- 2013
- Mount :
- Through Hole
- Current - Collector Pulsed (Icm) :
- 36A
- Additional Feature :
- LOW CONDUCTION LOSS
- Power - Max :
- 83W
- Factory Lead Time :
- 4 Weeks
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Voltage (VCEO) :
- 600V
- Td (on/off) @ 25°C :
- 4.3ns/36ns
- Max Power Dissipation :
- 83W
- Gate Charge :
- 18.3nC
- Polarity/Channel Type :
- N-Channel
- Radiation Hardening :
- No
- Gate-Emitter Voltage-Max :
- 20V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 600V
- Datasheets
- FGP5N60LS
FGP5N60LS Documents

FGP5N60LS datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGP5N60LS Description
FGP5N60LS, using novel field stop IGBT technology, ON Semiconductor's new series of field stop IGBTs offer the optimum performance for HID ballast where low conduction losses are essential.
FGP5N60LS Features
-
High Current Capability
-
Low Saturation Voltage: VCE(sat) = 1.7 V @IC = 5 A
-
Turn Off Time-Nom (toff): 187 ns
-
High Input Impedance
-
RoHS Compliant
-
No SVHC
FGP5N60LS Applications
-
HID Ballast
-
New Energy Vehicle
-
Photovoltaic Generation
-
Wind Power Generation
-
Smart Grid
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