FGD3N60LSDTM-T
- Mfr.Part #
- FGD3N60LSDTM-T
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- INTEGRATED CIRCUIT
- Stock
- 10,310
- In Stock :
- 10,310
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Switching Energy :
- 250μJ (on), 1mJ (off)
- Reverse Recovery Time :
- 234ns
- Published :
- 2004
- Td (on/off) @ 25°C :
- 40ns/600ns
- Input Type :
- Standard
- Gate Charge :
- 12.5nC
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Pbfree Code :
- yes
- Test Condition :
- 480V, 3A, 470 Ω, 10V
- Current - Collector (Ic) (Max) :
- 6A
- Current - Collector Pulsed (Icm) :
- 25A
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Power - Max :
- 40W
- Vce(on) (Max) @ Vge, Ic :
- 1.5V @ 10V, 3A
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FGD3N60LSDTM-T

FGD3N60LSDTM-T datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGD3N60LSDTM-T Description
ON Semiconductor's Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applica-tions where very low On-Voltage Drop is a required feature.
FGD3N60LSDTM-T Features
? High Current Capability
? Very Low Saturation Voltage : VCE(sat) = 1.2 V @ IC = 3A
? High Input Impedance
FGD3N60LSDTM-T Applications
? HID Lamp Applications
? Piezo Fuel Injection Applications
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