FGB40N6S2T
- Mfr.Part #
- FGB40N6S2T
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL IGBT
- Stock
- 2,449
- In Stock :
- 2,449
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Switching Energy :
- 115μJ (on), 195μJ (off)
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Power - Max :
- 290W
- Base Part Number :
- FGB40N6
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Collector Emitter Saturation Voltage :
- 1.9V
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 600V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Max Breakdown Voltage :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 20A
- Gate Charge :
- 35nC
- Test Condition :
- 390V, 20A, 3Ohm, 15V
- Collector Emitter Breakdown Voltage :
- 600V
- Td (on/off) @ 25°C :
- 8ns/35ns
- Supplier Device Package :
- TO-263AB
- Element Configuration :
- Single
- Input Type :
- Standard
- Max Collector Current :
- 75A
- Collector Emitter Voltage (VCEO) :
- 2.7V
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Rise Time :
- 10ns
- Max Power Dissipation :
- 290W
- Min Operating Temperature :
- -55°C
- Power Dissipation :
- 290W
- Current - Collector Pulsed (Icm) :
- 180A
- Mounting Type :
- Surface Mount
- Current Rating :
- 75A
- Current - Collector (Ic) (Max) :
- 75A
- Datasheets
- FGB40N6S2T

FGB40N6S2T datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGB40N6S2T Description
FGB40N6S2T developed by ON Semiconductor is a type of 600V, SMPS II Series N-Channel IGBT combining the fast switching speed of the SMPS IGBTs with low gate charge, low plateau voltage, and avalanche capability (UIS). Delay times can be shortened, and the power requirement of the gate drive can be reduced. FGB40N6S2T IGBT provides considerable benefits for high voltage switched mode power supply applications where low conduction requires loss, fast switching times, and UIS capability.
FGB40N6S2T Features
Low gate charge
Low plateau voltage
Low avalanche capability (UIS)
Low conduction loss
600V switching SOA capability
FGB40N6S2T Applications
Power Factor Correction (PFC) circuits
Full bridge topologies
Half bridge topologies
Push-Pull circuits
Uninterruptible power supplies
Zero voltage and zero current switching circuits
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