FGB40N60SM

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Gate Charge :

119nC

Switching Energy :

870μJ (on), 260μJ (off)

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

HTS Code :

8541.29.00.95

Operating Temperature :

-55°C~175°C TJ

Input Type :

Standard

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 40A

Max Power Dissipation :

349W

Pbfree Code :

yes

Lead Free :

Lead Free

Td (on/off) @ 25°C :

12ns/92ns

Max Breakdown Voltage :

600V

Packaging :

Tape and Reel (TR)

Turn On Time :

37 ns

Transistor Element Material :

SILICON

Published :

2013

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Length :

10.67mm

Fall Time-Max (tf) :

17ns

IGBT Type :

Field Stop

Mounting Type :

Surface Mount

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

JESD-609 Code :

e3

Gate-Emitter Thr Voltage-Max :

6V

Number of Terminations :

2

Rise Time-Max :

28ns

Collector Emitter Voltage (VCEO) :

600V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Height :

4.83mm

Width :

9.65mm

Collector Emitter Breakdown Voltage :

600V

Base Part Number :

FGB40N60

Collector Emitter Saturation Voltage :

2.3V

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Transistor Application :

POWER CONTROL

Max Collector Current :

80A

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

4 Weeks

Number of Elements :

1

Case Connection :

COLLECTOR

Current - Collector Pulsed (Icm) :

120A

Weight :

1.31247g

Number of Pins :

3

Gate-Emitter Voltage-Max :

20V

Test Condition :

400V, 40A, 6 Ω, 15V

Element Configuration :

Single

Turn Off Time-Nom (toff) :

132 ns

Power - Max :

349W

Mount :

Surface Mount