FGB40N60SM
- Mfr.Part #
- FGB40N60SM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- INSULATED GATE BIPOLAR TRANSISTO
- Stock
- 76,638
- In Stock :
- 76,638
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Factory Lead Time :
- 4 Weeks
- Test Condition :
- 400V, 40A, 6 Ω, 15V
- Collector Emitter Saturation Voltage :
- 2.3V
- Turn Off Time-Nom (toff) :
- 132 ns
- Td (on/off) @ 25°C :
- 12ns/92ns
- Published :
- 2013
- Lifecycle Status :
- ACTIVE (Last Updated: 4 days ago)
- HTS Code :
- 8541.29.00.95
- Switching Energy :
- 870μJ (on), 260μJ (off)
- Operating Temperature :
- -55°C~175°C TJ
- Max Collector Current :
- 80A
- Width :
- 9.65mm
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Polarity/Channel Type :
- N-Channel
- Element Configuration :
- Single
- Lead Free :
- Lead Free
- Height :
- 4.83mm
- Fall Time-Max (tf) :
- 17ns
- Collector Emitter Breakdown Voltage :
- 600V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Max Breakdown Voltage :
- 600V
- Length :
- 10.67mm
- Input Type :
- Standard
- Mounting Type :
- Surface Mount
- Transistor Application :
- POWER CONTROL
- Rise Time-Max :
- 28ns
- Weight :
- 1.31247g
- ECCN Code :
- EAR99
- Number of Terminations :
- 2
- Gate Charge :
- 119nC
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Collector Emitter Voltage (VCEO) :
- 600V
- Vce(on) (Max) @ Vge, Ic :
- 2.3V @ 15V, 40A
- Power - Max :
- 349W
- Case Connection :
- COLLECTOR
- IGBT Type :
- Field Stop
- Max Power Dissipation :
- 349W
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Packaging :
- Tape and Reel (TR)
- Radiation Hardening :
- No
- Turn On Time :
- 37 ns
- Current - Collector Pulsed (Icm) :
- 120A
- Terminal Finish :
- Tin (Sn)
- Base Part Number :
- FGB40N60
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Gate-Emitter Voltage-Max :
- 20V
- Gate-Emitter Thr Voltage-Max :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FGB40N60SM

FGB40N60SM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGB40N60SM Description
ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for welder and PFC applications that require low conduction and switching losses. FGB40N60SM has a maximum power dissipation of 349W and an operating temperature of -55°C175°C TJ. The FGB40N60SM has three pins and is packaged in a Tape & Reel (TR) format.
FGB40N60SM Features
-
Maximum junction temperature: TJ =175 °C
-
Positive temperaure co-efficient for an easy parallel operating
-
High current capability
-
Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC =40A
-
Fast switching: EOFF =6.5uJ/A
-
Tightened parameter distribution
-
RoHS compliant
-
IR reflow only
FGB40N60SM Applications
-
Power Management
-
Consumer Electronics
-
Portable Devices
-
Industrial
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