FGB40N60SM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - IGBTs - Single

Max Breakdown Voltage :

600V

RoHS Status :

ROHS3 Compliant

Gate-Emitter Voltage-Max :

20V

Current - Collector Pulsed (Icm) :

120A

Lead Free :

Lead Free

Max Collector Current :

80A

Test Condition :

400V, 40A, 6 Ω, 15V

HTS Code :

8541.29.00.95

Max Power Dissipation :

349W

Gate Charge :

119nC

ECCN Code :

EAR99

Number of Elements :

1

Collector Emitter Saturation Voltage :

2.3V

Case Connection :

COLLECTOR

Element Configuration :

Single

Vce(on) (Max) @ Vge, Ic :

2.3V @ 15V, 40A

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Number of Pins :

3

Width :

9.65mm

Mount :

Surface Mount

Terminal Finish :

Tin (Sn)

Pbfree Code :

yes

Terminal Form :

Gull wing

Base Part Number :

FGB40N60

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Turn On Time :

37 ns

Collector Emitter Voltage (VCEO) :

600V

Operating Temperature :

-55°C~175°C TJ

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

12ns/92ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

IGBT Type :

Field Stop

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rise Time-Max :

28ns

Polarity/Channel Type :

N-Channel

Number of Terminations :

2

Switching Energy :

870μJ (on), 260μJ (off)

Gate-Emitter Thr Voltage-Max :

6V

Power - Max :

349W

Transistor Element Material :

SILICON

Length :

10.67mm

Transistor Application :

POWER CONTROL

Packaging :

Tape and Reel (TR)

Fall Time-Max (tf) :

17ns

Turn Off Time-Nom (toff) :

132 ns

Weight :

1.31247g

Input Type :

Standard

JESD-609 Code :

e3

Radiation Hardening :

No

Factory Lead Time :

4 Weeks

Published :

2013

Height :

4.83mm