FGB40N60SM

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Mfr.Part #
FGB40N60SM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
INSULATED GATE BIPOLAR TRANSISTO
Stock
76,638
In Stock :
76,638

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - IGBTs - Single
Max Breakdown Voltage :
600V
RoHS Status :
ROHS3 Compliant
Gate-Emitter Voltage-Max :
20V
Current - Collector Pulsed (Icm) :
120A
Lead Free :
Lead Free
Max Collector Current :
80A
Test Condition :
400V, 40A, 6 Ω, 15V
HTS Code :
8541.29.00.95
Max Power Dissipation :
349W
Gate Charge :
119nC
ECCN Code :
EAR99
Number of Elements :
1
Collector Emitter Saturation Voltage :
2.3V
Case Connection :
COLLECTOR
Element Configuration :
Single
Vce(on) (Max) @ Vge, Ic :
2.3V @ 15V, 40A
Lifecycle Status :
ACTIVE (Last Updated: 4 days ago)
Number of Pins :
3
Width :
9.65mm
Mount :
Surface Mount
Terminal Finish :
Tin (Sn)
Pbfree Code :
yes
Terminal Form :
Gull wing
Base Part Number :
FGB40N60
JESD-30 Code :
R-PSSO-G2
Mounting Type :
Surface Mount
Turn On Time :
37 ns
Collector Emitter Voltage (VCEO) :
600V
Operating Temperature :
-55°C~175°C TJ
Collector Emitter Breakdown Voltage :
600V
Td (on/off) @ 25°C :
12ns/92ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Field Stop
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Rise Time-Max :
28ns
Polarity/Channel Type :
N-Channel
Number of Terminations :
2
Switching Energy :
870μJ (on), 260μJ (off)
Gate-Emitter Thr Voltage-Max :
6V
Power - Max :
349W
Transistor Element Material :
SILICON
Length :
10.67mm
Transistor Application :
POWER CONTROL
Packaging :
Tape and Reel (TR)
Fall Time-Max (tf) :
17ns
Turn Off Time-Nom (toff) :
132 ns
Weight :
1.31247g
Input Type :
Standard
JESD-609 Code :
e3
Radiation Hardening :
No
Factory Lead Time :
4 Weeks
Published :
2013
Height :
4.83mm
Introducing Transistors - IGBTs - Single Fairchild Semiconductor FGB40N60SM from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Base Part Number:FGB40N60, Mounting Type:Surface Mount, Operating Temperature:-55°C~175°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, FGB40N60SM pinout, FGB40N60SM datasheet PDF, FGB40N60SM amp .Beyond Transistors - IGBTs - Single Fairchild Semiconductor FGB40N60SM ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FGB40N60SM


FGB40N60SM datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at

FGB40N60SM Description


ON Semiconductor's new field stop 2nd generation IGBTs, which use revolutionary field stop IGBT technology, provide the best performance for welder and PFC applications that require low conduction and switching losses. FGB40N60SM has a maximum power dissipation of 349W and an operating temperature of -55°C175°C TJ. The FGB40N60SM has three pins and is packaged in a Tape & Reel (TR) format.



FGB40N60SM Features


  • Maximum junction temperature: TJ =175 °C

  • Positive temperaure co-efficient for an easy parallel operating

  • High current capability

  • Low saturation voltage: VCE(sat) =1.9V(Typ.) @ IC =40A

  • Fast switching: EOFF =6.5uJ/A

  • Tightened parameter distribution

  • RoHS compliant

  • IR reflow only



FGB40N60SM Applications


  • Power Management

  • Consumer Electronics

  • Portable Devices

  • Industrial


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