FGB40N6S2
- Mfr.Part #
- FGB40N6S2
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- N-CHANNEL IGBT
- Stock
- 12,383
- In Stock :
- 12,383
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - IGBTs - Single
- Max Operating Temperature :
- 150°C
- Power Dissipation :
- 290W
- Mount :
- Surface Mount
- Number of Pins :
- 3
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Type :
- Standard
- Max Power Dissipation :
- 290W
- Collector Emitter Saturation Voltage :
- 1.9V
- Packaging :
- Tube
- Base Part Number :
- FGB40N6
- Voltage - Rated DC :
- 600V
- Collector Emitter Voltage (VCEO) :
- 600V
- Collector Emitter Breakdown Voltage :
- 600V
- Gate Charge :
- 35nC
- Element Configuration :
- Single
- Rise Time :
- 10ns
- Current - Collector (Ic) (Max) :
- 75A
- Vce(on) (Max) @ Vge, Ic :
- 2.7V @ 15V, 20A
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Test Condition :
- 390V, 20A, 3Ohm, 15V
- Supplier Device Package :
- TO-263AB
- Current Rating :
- 75A
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Switching Energy :
- 115μJ (on), 195μJ (off)
- Power - Max :
- 290W
- Current - Collector Pulsed (Icm) :
- 180A
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 75A
- Td (on/off) @ 25°C :
- 8ns/35ns
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Datasheets
- FGB40N6S2

FGB40N6S2 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
FGB40N6S2 Description
FGB40N6S2 belongs to the family of SMPS II Series N-Channel IGBTs with lower gate charge, plateau voltage, and avalanche capability, which is manufactured by ON Semiconductor for high-voltage switched-mode power supply applications requiring low conduction loss, fast switching times, and high UIS capability. IGBT FGB40N6S2 is able to shorten delay times and reduce the power requirement of the gate drive.
FGB40N6S2 Features
-
Lower gate charge
-
Lower plateau voltage
-
Lower avalanche capability
-
Advanced switching speed
-
Available in the TO-263AB package
FGB40N6S2 Applications
-
PFC circuits
-
Push-pull circuits
-
Uninterruptible power supplies
-
Half-bridge and full-bridge topologies
-
Zero voltage and zero current switching circuits
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