FGA50S110P

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Turn On Time :

370 ns

Transistor Application :

POWER CONTROL

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

1.1kV

Height :

20.1mm

Polarity/Channel Type :

N-Channel

Number of Terminations :

3

Package / Case :

TO-3P-3, SC-65-3

Terminal Finish :

Tin (Sn)

Current - Collector Pulsed (Icm) :

120A

Mount :

Through Hole

JESD-609 Code :

e3

Turn Off Time-Nom (toff) :

492 ns

HTS Code :

8541.29.00.95

Collector Emitter Saturation Voltage :

2.7V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Length :

15.8mm

Collector Emitter Voltage (VCEO) :

1.1kV

RoHS Status :

ROHS3 Compliant

Input Type :

Standard

Number of Elements :

1

Weight :

6.401g

Max Power Dissipation :

300W

Element Configuration :

Single

Gate-Emitter Voltage-Max :

25V

Power Dissipation :

300W

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Mounting Type :

Through Hole

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 50A

Voltage - Collector Emitter Breakdown (Max) :

1100V

Number of Pins :

3

Published :

2013

Max Collector Current :

50A

Gate Charge :

195nC

ECCN Code :

EAR99

Factory Lead Time :

15 Weeks

IGBT Type :

Trench Field Stop

Gate-Emitter Thr Voltage-Max :

7.5V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Width :

5mm