FGA50S110P

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Power Dissipation :

300W

Transistor Element Material :

SILICON

Current - Collector Pulsed (Icm) :

120A

Gate-Emitter Thr Voltage-Max :

7.5V

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

1.1kV

Length :

15.8mm

Height :

20.1mm

Pbfree Code :

yes

IGBT Type :

Trench Field Stop

Turn Off Time-Nom (toff) :

492 ns

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

50A

Number of Elements :

1

Number of Pins :

3

Mounting Type :

Through Hole

Gate-Emitter Voltage-Max :

25V

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

POWER CONTROL

JESD-609 Code :

e3

Factory Lead Time :

15 Weeks

Mount :

Through Hole

Collector Emitter Saturation Voltage :

2.7V

Polarity/Channel Type :

N-Channel

Published :

2013

Packaging :

Tube

HTS Code :

8541.29.00.95

Vce(on) (Max) @ Vge, Ic :

2.6V @ 15V, 50A

Radiation Hardening :

No

Terminal Finish :

Tin (Sn)

Package / Case :

TO-3P-3, SC-65-3

Weight :

6.401g

Max Power Dissipation :

300W

Input Type :

Standard

RoHS Status :

ROHS3 Compliant

Width :

5mm

Gate Charge :

195nC

Voltage - Collector Emitter Breakdown (Max) :

1100V

Element Configuration :

Single

Collector Emitter Breakdown Voltage :

1.1kV

Turn On Time :

370 ns