FGA50N100BNTD2

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Turn Off Time-Nom (toff) :

308 ns

JESD-609 Code :

e3

Terminal Finish :

Tin (Sn)

Height :

20.1mm

Max Collector Current :

50A

Input Type :

Standard

Current - Collector Pulsed (Icm) :

200A

Max Power Dissipation :

156W

Published :

2013

Width :

5mm

HTS Code :

8541.29.00.95

Fall Time-Max (tf) :

100ns

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Collector Emitter Saturation Voltage :

1.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Weight :

6.401g

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

7V

Voltage - Collector Emitter Breakdown (Max) :

1000V

Collector Emitter Breakdown Voltage :

1kV

Reverse Recovery Time :

75 ns

Pbfree Code :

yes

Transistor Application :

POWER CONTROL

Test Condition :

600V, 60A, 10 Ω, 15V

Collector Emitter Voltage (VCEO) :

1kV

Number of Terminations :

3

Power - Max :

156W

ECCN Code :

EAR99

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Length :

15.8mm

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

Mount :

Through Hole

Gate Charge :

257nC

Packaging :

Tube

Package / Case :

TO-3P-3, SC-65-3

Number of Pins :

3

IGBT Type :

NPT and Trench

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Gate-Emitter Voltage-Max :

25V

Number of Elements :

1

Turn On Time :

102 ns

Factory Lead Time :

8 Weeks

Td (on/off) @ 25°C :

34ns/243ns

Transistor Element Material :

SILICON