FGA50N100BNTDTU

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Mount :

Through Hole

Width :

5mm

Current - Collector Pulsed (Icm) :

100A

Number of Pins :

3

Collector Emitter Saturation Voltage :

2.5V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Max Collector Current :

50A

Input Type :

Standard

Power Dissipation :

156W

IGBT Type :

NPT and Trench

Terminal Finish :

Tin (Sn)

Factory Lead Time :

5 Weeks

Number of Elements :

1

Polarity/Channel Type :

N-Channel

Collector Emitter Breakdown Voltage :

1kV

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 4 days ago)

Published :

2013

Voltage - Collector Emitter Breakdown (Max) :

1000V

Turn On Time :

460 ns

Vce(on) (Max) @ Vge, Ic :

2.9V @ 15V, 60A

JESD-609 Code :

e3

HTS Code :

8541.29.00.95

Transistor Application :

AUTOMOTIVE IGNITION

Turn Off Time-Nom (toff) :

760 ns

Fall Time-Max (tf) :

250ns

Gate-Emitter Voltage-Max :

25V

Transistor Element Material :

SILICON

Radiation Hardening :

No

Pbfree Code :

yes

Gate-Emitter Thr Voltage-Max :

7V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Voltage (VCEO) :

1kV

Gate Charge :

275nC

Height :

20.1mm

Number of Terminations :

3

Length :

15.8mm

Reverse Recovery Time :

1.5μs

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube

Weight :

6.401g

Max Power Dissipation :

156W

Package / Case :

TO-3P-3, SC-65-3