FF150R12YT3BOMA1

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Mfr.Part #
FF150R12YT3BOMA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 200A 625W
Stock
27,331
In Stock :
27,331

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
RoHS Status :
RoHS Compliant
Length :
55.9mm
Transistor Element Material :
SILICON
Polarity/Channel Type :
N-Channel
Case Connection :
Isolated
Number of Terminations :
24
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 150A
Number of Pins :
2
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Pin Count :
24
Operating Temperature :
-40°C~125°C
Lead Free :
Contains Lead
Mounting Type :
Chassis Mount
Max Collector Current :
200A
Collector Emitter Voltage (VCEO) :
1.2kV
Width :
45.6mm
Qualification Status :
Not Qualified
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
1mA
Terminal Position :
UPPER
Moisture Sensitivity Level (MSL) :
Not Applicable
Package / Case :
Module
NTC Thermistor :
yes
Height :
17mm
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Mount :
PCB, Screw
Configuration :
2 Independent
Voltage - Collector Emitter Breakdown (Max) :
1200V
Turn On Time :
330 ns
Terminal Form :
UNSPECIFIED
Pbfree Code :
No
Max Power Dissipation :
625W
Factory Lead Time :
14 Weeks
Published :
2002
Element Configuration :
Dual
Number of Elements :
2
Input Capacitance (Cies) @ Vce :
10.5nF @ 25V
Input :
Standard
Halogen Free :
Not Halogen Free
Power - Max :
625W
Turn Off Time-Nom (toff) :
610 ns
Datasheets
FF150R12YT3BOMA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF150R12YT3BOMA1 from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:24, Number of Pins:2, Operating Temperature:-40°C~125°C, Mounting Type:Chassis Mount, Package / Case:Module, FF150R12YT3BOMA1 pinout, FF150R12YT3BOMA1 datasheet PDF, FF150R12YT3BOMA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF150R12YT3BOMA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



FF150R12YT3BOMA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF150R12YT3BOMA1 Description


FF150R12YT3BOMA1 is a 1200v IGBT-module. The transistor FF150R12YT3BOMA1 can be applied in  Communications equipment, Wireless Infrastructure, Industrial, Lighting, Enterprise systems, and Datacenter & enterprise computing applications due to the following features. The Operating and Storage Temperature Range is between -40 and 125℃. And the transistor FP20R06KL4BOMA1 is in the tray package with 625W Power dissipations.



FF150R12YT3BOMA1 Features


Collector-emitter voltage Tvj = 25°C: 1200v

Continuous DC collector current TC = 25°C : 200A

Repetitive peak collector current Tp = 1 ms: 300A

Total power dissipation Tc = 25°C: 625W

Gate-emitter peak voltage: ±20V



FF150R12YT3BOMA1 Applications


Communications equipment 

Wireless infrastructure 

Industrial 

Lighting 

Enterprise systems 

Datacenter & enterprise computing


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