FF150R12KE3GHOSA1

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Mfr.Part #
FF150R12KE3GHOSA1
Manufacturer
Infineon Technologies
Package / Case
Module
Datasheet
Download
Description
IGBT MOD 1200V 225A 780W
Stock
9
In Stock :
9

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Modules
ECCN Code :
EAR99
Turn On Time :
400 ns
RoHS Status :
RoHS Compliant
Input :
Standard
Input Capacitance (Cies) @ Vce :
11nF @ 25V
Terminal Position :
UPPER
Vce(on) (Max) @ Vge, Ic :
2.15V @ 15V, 150A
Package / Case :
Module
Halogen Free :
Not Halogen Free
Case Connection :
Isolated
Current - Collector (Ic) (Max) :
225A
Number of Terminations :
7
Voltage - Collector Emitter Breakdown (Max) :
1200V
Surface Mount :
No
JESD-30 Code :
R-XUFM-X7
Published :
2012
Number of Elements :
2
Pin Count :
7
Mounting Type :
Chassis Mount
Configuration :
Single Chopper
Polarity/Channel Type :
N-Channel
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
IGBT Type :
Trench Field Stop
NTC Thermistor :
No
Current - Collector Cutoff (Max) :
5mA
Operating Temperature :
-40°C~125°C
Lead Free :
Lead Free
Turn Off Time-Nom (toff) :
830 ns
Terminal Form :
UNSPECIFIED
Power - Max :
780W
Pbfree Code :
yes
Factory Lead Time :
14 Weeks
Element Configuration :
Dual
Transistor Element Material :
SILICON
Datasheets
FF150R12KE3GHOSA1
Introducing Transistors - IGBTs - Modules Infineon Technologies FF150R12KE3GHOSA1 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:Module, Number of Terminations:7, Mounting Type:Chassis Mount, Operating Temperature:-40°C~125°C, FF150R12KE3GHOSA1 pinout, FF150R12KE3GHOSA1 datasheet PDF, FF150R12KE3GHOSA1 amp .Beyond Transistors - IGBTs - Modules Infineon Technologies FF150R12KE3GHOSA1 ,we also offer FS450R12KE3BOSA1, VS-GT80DA120U, FD450R12KE4PHOSA1, Our vast inventory has you covered. Contact us now for immediate solutions.



FF150R12KE3GHOSA1 datasheet pdf and Transistors - IGBTs - Modules product details from Infineon Technologies stock available at

FF150R12KE3GHOSA1 Description

 

FF150R12KE3GHOSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FF150R12KE3GHOSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

FF150R12KE3GHOSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

FF150R12KE3GHOSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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