FDZ299P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.6A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±12V

Pulsed Drain Current-Max (IDM) :

10A

Pin Count :

9

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

20V

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Pbfree Code :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

Non-RoHS Compliant

Avalanche Energy Rating (Eas) :

48 mJ

Reach Compliance Code :

Unknown

JESD-30 Code :

S-PBGA-B9

Number of Terminations :

9

Number of Elements :

1

Terminal Position :

BOTTOM

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

Qualification Status :

COMMERCIAL

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

yes

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Series :

PowerTrench®

Input Capacitance (Ciss) (Max) @ Vds :

742pF @ 10V

Drain Current-Max (Abs) (ID) :

4.6A

Terminal Finish :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.7W Ta

Package / Case :

9-WFBGA

Drain-source On Resistance-Max :

0.055Ohm

FET Type :

P-Channel

Terminal Form :

Ball