FDZ299P
- Mfr.Part #
- FDZ299P
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- 9-WFBGA
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 4.6A 9BGA
- Stock
- 68,536
- In Stock :
- 68,536
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 4.6A
- Gate Charge (Qg) (Max) @ Vgs :
- 9nC @ 4.5V
- DS Breakdown Voltage-Min :
- 20V
- Reach Compliance Code :
- Unknown
- FET Type :
- P-Channel
- Avalanche Energy Rating (Eas) :
- 48 mJ
- Terminal Position :
- BOTTOM
- Terminal Form :
- Ball
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- PowerTrench®
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 742pF @ 10V
- RoHS Status :
- Non-RoHS Compliant
- Vgs (Max) :
- ±12V
- Number of Terminations :
- 9
- Rds On (Max) @ Id, Vgs :
- 55m Ω @ 4.6A, 4.5V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- JESD-30 Code :
- S-PBGA-B9
- Qualification Status :
- COMMERCIAL
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 2.5V 4.5V
- Transistor Element Material :
- SILICON
- Surface Mount :
- yes
- Drain to Source Voltage (Vdss) :
- 20V
- Package / Case :
- 9-WFBGA
- Power Dissipation-Max :
- 1.7W Ta
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.055Ohm
- Pulsed Drain Current-Max (IDM) :
- 10A
- Pin Count :
- 9
- Current - Continuous Drain (Id) @ 25°C :
- 4.6A Ta
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Terminal Finish :
- NOT SPECIFIED
- Pbfree Code :
- No
- Datasheets
- FDZ299P
FDZ299P Documents

P-Channel Tape & Reel (TR) 55m Ω @ 4.6A, 4.5V ±12V 742pF @ 10V 9nC @ 4.5V 20V 9-WFBGA
FDZ299P Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 48 mJ.The maximum input capacitance of this device is 742pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 4.6A.There is no pulsed drain current maximum for this device based on its rated peak drain current 10A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 20V.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (2.5V 4.5V), this device helps reduce its power consumption.
FDZ299P Features
the avalanche energy rating (Eas) is 48 mJ
based on its rated peak drain current 10A.
a 20V drain to source voltage (Vdss)
FDZ299P Applications
There are a lot of Rochester Electronics, LLC
FDZ299P applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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