FDZ293P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

9-VFBGA

Vgs (Max) :

±12V

Surface Mount :

yes

Number of Terminations :

9

Pbfree Code :

yes

FET Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e2

Pulsed Drain Current-Max (IDM) :

10A

Current - Continuous Drain (Id) @ 25°C :

4.6A Ta

Operating Temperature :

-55°C~150°C TJ

Power Dissipation-Max :

1.7W Ta

Input Capacitance (Ciss) (Max) @ Vds :

754pF @ 10V

Terminal Form :

Ball

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.046Ohm

Terminal Position :

BOTTOM

DS Breakdown Voltage-Min :

20V

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Terminal Finish :

TIN SILVER

Rds On (Max) @ Id, Vgs :

46m Ω @ 4.6A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

JESD-30 Code :

R-PBGA-B9

Number of Elements :

1

Pin Count :

9

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Peak Reflow Temperature (Cel) :

260

Drain to Source Voltage (Vdss) :

20V

Series :

PowerTrench®

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 4.5V

Drain Current-Max (Abs) (ID) :

4.6A

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Qualification Status :

COMMERCIAL

RoHS Status :

ROHS3 Compliant