FDY1002PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Weight :

32mg

Mounting Type :

Surface Mount

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain Current-Max (Abs) (ID) :

0.83A

Fall Time (Typ) :

2.9 ns

Gate to Source Voltage (Vgs) :

8V

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 4.5V

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

23 ns

Continuous Drain Current (ID) :

830mA

FET Type :

2 P-Channel (Dual)

Power Dissipation :

625mW

Series :

PowerTrench®

Vgs(th) (Max) @ Id :

1V @ 250μA

Element Configuration :

Dual

Height :

600μm

Radiation Hardening :

No

Turn On Delay Time :

3.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

135pF @ 10V

Width :

1.2mm

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Lead Free :

Lead Free

Pbfree Code :

yes

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-563, SOT-666

Terminal Form :

Flat

ECCN Code :

EAR99

Published :

2006

Length :

1.7mm

Contact Plating :

Tin

Resistance :

500MOhm

Number of Pins :

6

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

500m Ω @ 830mA, 4.5V

Factory Lead Time :

10 Weeks

Drain to Source Breakdown Voltage :

20V

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Rise Time :

2.9ns

Number of Terminations :

6

Max Power Dissipation :

446mW

Operating Temperature :

-55°C~150°C TJ