FDY1002PZ

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Mfr.Part #
FDY1002PZ
Manufacturer
onsemi
Package / Case
SOT-563, SOT-666
Datasheet
Download
Description
MOSFET 2P-CH 20V 830MA SOT563F
Stock
2,031
In Stock :
2,031

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Arrays
Drain to Source Voltage (Vdss) :
20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
1.2mm
Vgs(th) (Max) @ Id :
1V @ 250μA
Turn-Off Delay Time :
23 ns
Package / Case :
SOT-563, SOT-666
Contact Plating :
Tin
Packaging :
Tape and Reel (TR)
Number of Terminations :
6
Factory Lead Time :
10 Weeks
Mounting Type :
Surface Mount
Mount :
Surface Mount
Weight :
32mg
Turn On Delay Time :
3.5 ns
FET Feature :
Logic Level Gate
Continuous Drain Current (ID) :
830mA
Number of Elements :
2
Pbfree Code :
yes
Fall Time (Typ) :
2.9 ns
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Number of Pins :
6
Length :
1.7mm
ECCN Code :
EAR99
Operating Temperature :
-55°C~150°C TJ
Published :
2006
Height :
600μm
Gate to Source Voltage (Vgs) :
8V
Drain Current-Max (Abs) (ID) :
0.83A
Rds On (Max) @ Id, Vgs :
500m Ω @ 830mA, 4.5V
Lifecycle Status :
ACTIVE (Last Updated: 20 hours ago)
Lead Free :
Lead Free
Terminal Form :
Flat
Power Dissipation :
625mW
RoHS Status :
ROHS3 Compliant
Series :
PowerTrench®
Radiation Hardening :
No
Rise Time :
2.9ns
Gate Charge (Qg) (Max) @ Vgs :
3.1nC @ 4.5V
Drain to Source Breakdown Voltage :
20V
Element Configuration :
Dual
FET Type :
2 P-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds :
135pF @ 10V
Resistance :
500MOhm
JESD-609 Code :
e3
Max Power Dissipation :
446mW
Introducing Transistors - FETs, MOSFETs - Arrays onsemi FDY1002PZ from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:SOT-563, SOT-666, Number of Terminations:6, Mounting Type:Surface Mount, Number of Pins:6, Operating Temperature:-55°C~150°C TJ, FDY1002PZ pinout, FDY1002PZ datasheet PDF, FDY1002PZ amp .Beyond Transistors - FETs, MOSFETs - Arrays onsemi FDY1002PZ ,we also offer SSM6N57NU,LF, DMN2004DMK-7, AO4629, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FDY1002PZ


FDY1002PZ datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at

FDY1002PZ               Description


This Dual P-Channel MOSFET has been designed using an advanced Power Trench process to optimize the rDS(on)@VGS = ¨C1.5 V.

 

FDY1002PZ           Features

 

Max rDS(on) = 0.5 |? at VGS = ¨C4.5 V, ID = ¨C0.83 A

Max rDS(on) = 0.7 |? at VGS = ¨C2.5 V, ID = ¨C0.70 A

Max rDS(on) = 1.2 |? at VGS = ¨C1.8 V, ID = ¨C0.43 A

Max rDS(on) = 1.8 |? at VGS = ¨C1.5 V, ID = ¨C0.36 A

HBM ESD protection level = 1400 V (Note 3)

RoHS Compliant


FDY1002PZ                   Applications

This product is general usage and suitable for many different applications.

Li-Ion Battery Pack

 






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