FDY1002PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Fall Time (Typ) :

2.9 ns

Length :

1.7mm

RoHS Status :

ROHS3 Compliant

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3.1nC @ 4.5V

Height :

600μm

Number of Pins :

6

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

135pF @ 10V

FET Feature :

Logic Level Gate

Element Configuration :

Dual

Max Power Dissipation :

446mW

Gate to Source Voltage (Vgs) :

8V

Continuous Drain Current (ID) :

830mA

Contact Plating :

Tin

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Published :

2006

Mounting Type :

Surface Mount

Turn On Delay Time :

3.5 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Breakdown Voltage :

20V

Factory Lead Time :

10 Weeks

Number of Terminations :

6

ECCN Code :

EAR99

Package / Case :

SOT-563, SOT-666

Weight :

32mg

Terminal Form :

Flat

Drain to Source Voltage (Vdss) :

20V

Mount :

Surface Mount

Rise Time :

2.9ns

Drain Current-Max (Abs) (ID) :

0.83A

Pbfree Code :

yes

Radiation Hardening :

No

Power Dissipation :

625mW

Resistance :

500MOhm

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Packaging :

Tape and Reel (TR)

Width :

1.2mm

Vgs(th) (Max) @ Id :

1V @ 250μA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

500m Ω @ 830mA, 4.5V

Series :

PowerTrench®

Turn-Off Delay Time :

23 ns