FDY100PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Position :

Dual

Terminal Finish :

Tin (Sn)

Package / Case :

SC-89, SOT-490

Weight :

30mg

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

6 ns

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 10V

Number of Pins :

3

Termination :

SMD/SMT

Factory Lead Time :

8 Weeks

Resistance :

1.2Ohm

Width :

980μm

Vgs (Max) :

±8V

Drive Voltage (Max Rds On,Min Rds On) :

1.8V 4.5V

Drain to Source Voltage (Vdss) :

20V

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Flat

Continuous Drain Current (ID) :

350mA

Published :

2006

Additional Feature :

ESD Protection

Transistor Element Material :

SILICON

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 350mA, 4.5V

Operating Mode :

ENHANCEMENT MODE

Rise Time :

13ns

Gate to Source Voltage (Vgs) :

8V

Mount :

Surface Mount

Fall Time (Typ) :

13 ns

Transistor Application :

SWITCHING

Pbfree Code :

yes

Series :

PowerTrench®

Nominal Vgs :

-1 V

Dual Supply Voltage :

-20V

Current - Continuous Drain (Id) @ 25°C :

350mA Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Turn-Off Delay Time :

8 ns

Length :

1.7mm

Number of Terminations :

3

JESD-609 Code :

e3

Power Dissipation :

625mW

FET Type :

P-Channel

Height :

780μm

Radiation Hardening :

No

Number of Elements :

1

ECCN Code :

EAR99

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Element Configuration :

Single

Lifecycle Status :

ACTIVE (Last Updated: 20 hours ago)

Threshold Voltage :

-1V

Drain to Source Breakdown Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Power Dissipation-Max :

625mW Ta