FDY102PZ
- Mfr.Part #
- FDY102PZ
- Manufacturer
- onsemi
- Package / Case
- SC-89, SOT-490
- Datasheet
- Download
- Description
- MOSFET P-CH 20V 830MA SC89-3
- Stock
- 2,880
- In Stock :
- 2,880
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 1.5V 4.5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 3.1nC @ 4.5V
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 135pF @ 10V
- Length :
- 1.7mm
- Gate to Source Voltage (Vgs) :
- 8V
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Weight :
- 30mg
- Contact Plating :
- Tin
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Rise Time :
- 2.9ns
- Power Dissipation-Max :
- 625mW Ta
- Radiation Hardening :
- No
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Number of Elements :
- 1
- Resistance :
- 500MOhm
- Turn-Off Delay Time :
- 23 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 22 hours ago)
- Rds On (Max) @ Id, Vgs :
- 500m Ω @ 830mA, 4.5V
- Power Dissipation :
- 625mW
- Width :
- 980μm
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Height :
- 780μm
- Package / Case :
- SC-89, SOT-490
- FET Type :
- P-Channel
- Vgs (Max) :
- ±8V
- Factory Lead Time :
- 8 Weeks
- Published :
- 2010
- Continuous Drain Current (ID) :
- 830mA
- Fall Time (Typ) :
- 2.9 ns
- Turn On Delay Time :
- 3.5 ns
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Current - Continuous Drain (Id) @ 25°C :
- 830mA Ta
- Series :
- PowerTrench®
- Threshold Voltage :
- -700mV
- Drain to Source Breakdown Voltage :
- 20V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FDY102PZ

P-Channel Tape & Reel (TR) 500m Ω @ 830mA, 4.5V ±8V 135pF @ 10V 3.1nC @ 4.5V SC-89, SOT-490
FDY102PZ Description
FDY102PZ belongs to the family of single P-channel specified PowerTrench? MOSFETs which are provided by ON Semiconductor based on the advanced power trench process to optimize the RDS (on) @ VGS = -1.5 V. Due to its specific features, it is ideally suitable for Li-lon battery pack.
FDY102PZ Features
-
Advanced power trench process
-
ESD protection diode
-
RoHS compliant
-
Advanced power trench process
-
HBM ESD protection level = 1400 V
FDY102PZ Applications
-
Li-lon battery pack
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