FDY101PZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

PowerTrench®

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

150mA Ta

Gate Charge (Qg) (Max) @ Vgs :

1.4nC @ 4.5V

Rise Time :

13ns

Length :

1.7mm

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Height :

780μm

Weight :

30mg

Drain to Source Breakdown Voltage :

-20V

Rds On (Max) @ Id, Vgs :

8 Ω @ 150mA, 4.5V

Power Dissipation-Max :

625mW Ta

Number of Elements :

1

Terminal Position :

Dual

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

20V

Power Dissipation :

625mW

Radiation Hardening :

No

Vgs (Max) :

±8V

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

-1V

Drive Voltage (Max Rds On,Min Rds On) :

1.5V 4.5V

Fall Time (Typ) :

13 ns

Drain-source On Resistance-Max :

8Ohm

Mounting Type :

Surface Mount

Terminal Form :

Flat

Factory Lead Time :

8 Weeks

Width :

980μm

Number of Terminations :

3

Turn On Delay Time :

6 ns

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Package / Case :

SC-89, SOT-490

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e3

Pbfree Code :

yes

Input Capacitance (Ciss) (Max) @ Vds :

100pF @ 10V

Gate to Source Voltage (Vgs) :

8V

Turn-Off Delay Time :

8 ns

FET Type :

P-Channel

Packaging :

Tape and Reel (TR)

Published :

2008

Terminal Finish :

Tin (Sn)

Lifecycle Status :

ACTIVE (Last Updated: 21 hours ago)

Continuous Drain Current (ID) :

150mA

Element Configuration :

Single

ECCN Code :

EAR99

Transistor Element Material :

SILICON