FDW2516NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Surface Mount :

yes

Terminal Finish :

Tin

Drain to Source Voltage (Vdss) :

20V

Drain Current-Max (Abs) (ID) :

5.8A

Reach Compliance Code :

Unknown

Current - Continuous Drain (Id) @ 25°C :

5.8A

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

745pF @ 10V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Drain-source On Resistance-Max :

0.03Ohm

Qualification Status :

COMMERCIAL

FET Feature :

Logic Level Gate

Rds On (Max) @ Id, Vgs :

30m Ω @ 5.8A, 4.5V

Series :

PowerTrench®

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G8

Pin Count :

8

DS Breakdown Voltage-Min :

20V

Number of Terminations :

8

Terminal Form :

Gull wing

FET Type :

2 N-Channel (Dual)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Power - Max :

1.1W

Pulsed Drain Current-Max (IDM) :

20A

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260