FDW2512NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

20V

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Element Material :

SILICON

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 10V

Series :

PowerTrench®

Number of Terminations :

8

Power - Max :

1.6W

Qualification Status :

COMMERCIAL

Surface Mount :

yes

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Pin Count :

8

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.028Ohm

JESD-30 Code :

R-PDSO-G8

Pbfree Code :

yes

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Dual)

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

6A

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 4.5V

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

6A

Terminal Finish :

Tin

Rds On (Max) @ Id, Vgs :

28m Ω @ 6A, 4.5V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Package / Case :

8-TSSOP (0.173, 4.40mm Width)