FDW2511NZ

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

7.1A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1000pF @ 10V

Qualification Status :

COMMERCIAL

Current - Continuous Drain (Id) @ 25°C :

7.1A

Drain-source On Resistance-Max :

0.02Ohm

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PDSO-G8

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

20V

Pin Count :

8

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

17.3nC @ 4.5V

FET Type :

2 N-Channel (Dual) Common Drain

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Terminal Form :

Gull wing

Number of Terminations :

8

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

20m Ω @ 7.1A, 4.5V

Power - Max :

1.6W

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

PowerTrench®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

Terminal Finish :

Tin

Package / Case :

8-TSSOP (0.173, 4.40mm Width)

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

DS Breakdown Voltage-Min :

20V