FDW2508PB
- Mfr.Part #
- FDW2508PB
- Manufacturer
- onsemi
- Package / Case
- 8-TSSOP (0.173, 4.40mm Width)
- Datasheet
- Download
- Description
- MOSFET 2P-CH 12V 6A 8-TSSOP
- Stock
- 2,382
- In Stock :
- 2,382
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C :
- 6A
- Operating Temperature :
- -55°C~150°C TJ
- Supplier Device Package :
- 8-TSSOP
- Series :
- PowerTrench®
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 4.5V
- FET Type :
- 2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs :
- 18mOhm @ 6A, 4.5V
- FET Feature :
- Logic Level Gate
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Drain to Source Voltage (Vdss) :
- 12V
- Power - Max :
- 1W
- Package / Case :
- 8-TSSOP (0.173, 4.40mm Width)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 3775pF @ 6V
- Packaging :
- Tape and Reel (TR)
- Datasheets
- FDW2508PB
FDW2508PB datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from ON Semiconductor stock available at
FDW2508PB Description
The cutting-edge low voltage PowerTrench? from Fairchild Semiconductor is used in this P-Channel -1.8V specified MOSFET. For battery power management applications, it has been optimized. These devices are made to offer a high level of dv/dt capability for the most demanding applications in addition to a significant reduction in on-resistance.
FDW2508PB Features
-
Low entrance fee
-
Extremely low rDS(on) with high performance trench technology
-
TSSOP-8 low profile package
-
RoHS compliant
FDW2508PB Applications
-
Power administration
-
Charge switch
-
Battery security
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