FDV305N

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

20V

Rds On (Max) @ Id, Vgs :

220m Ω @ 900mA, 4.5V

Element Configuration :

Single

Number of Terminations :

3

Turn On Delay Time :

4.5 ns

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Factory Lead Time :

10 Weeks

Continuous Drain Current (ID) :

900mA

Vgs (Max) :

±12V

Termination :

SMD/SMT

Operating Mode :

ENHANCEMENT MODE

Resistance :

220mOhm

Dual Supply Voltage :

20V

Width :

1.3mm

Operating Temperature :

-55°C~150°C TJ

Weight :

30mg

Power Dissipation-Max :

350mW Ta

Terminal Form :

Gull wing

Radiation Hardening :

No

Lifecycle Status :

ACTIVE (Last Updated: 17 hours ago)

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Lead Free :

Lead Free

Height :

930μm

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

12V

REACH SVHC :

No SVHC

Length :

2.92mm

Mounting Type :

Surface Mount

Fall Time (Typ) :

7 ns

Terminal Position :

Dual

Drain to Source Breakdown Voltage :

20V

Pbfree Code :

yes

Contact Plating :

Tin

Number of Pins :

3

Published :

2003

Package / Case :

TO-236-3, SC-59, SOT-23-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Turn-Off Delay Time :

8 ns

Series :

PowerTrench®

Rise Time :

7ns

ECCN Code :

EAR99

Mount :

Surface Mount

Power Dissipation :

350mW

Transistor Application :

SWITCHING

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

0.9A

Current Rating :

900mA

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

109pF @ 10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.5nC @ 4.5V

Threshold Voltage :

1V